Work

Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system

Year: 2018

Type: conference-paper

Abstract: High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with embedded decoupling capacitors and a high performance integrated thermal management system.

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2018.8393651

Authors: Bassem Mouawad, Robert Skuriat, Jianfeng Li, C. Mark Johnson, Christina DiMarino

Institutions: University of Nottingham, Virginia Tech

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: green

Funder: Engineering and Physical Sciences Research Council