Work

TCAD Modeling of a 1200 V SiC MOSFET

Year: 2018

Type: article

Abstract: In this work, TCAD modeling of a 1200 V SiC MOSFET is presented. The main focus is on modeling of the channel mobility, and the Coulomb scattering by interface traps and surface roughness are therefore included. For the Coulomb scattering, the interface trap profiles have been extrapolated from the subthreshold characteristics at room temperature, whereas the scattering due to surface roughness has been fitted by comparing to the transfer characteristics at high gate bias. A comparison with measurements for the transfer characteristic and the output characteristic is also presented. Results show that the reduction of the threshold voltage with increasing temperature and the temperature dependence of the output characteristics are properly modeled.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.924.689

Authors: Kwang Won Lee, Benedetto Buono, Martin Domeij, Jimmy Franchi

Institution: ON Semiconductor (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2810495716

FWCI: 0.191

Cites: 5

Cited by: 3

Related to: 10