Work

N-buffer design optimization for short circuit SOA ruggedness in 1200V class IGBT

Year: 2018

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2018.8393619

Authors: Kenji Suzuki, Koichi Nishi, Mitsuru Kaneda, Akihiko Furukawa

Institution: Mitsubishi Electric (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2811175415

FWCI: 1.196

Cites: 8

Cited by: 9

Related to: 10