Work

Improvement by Channel Recess of Contact Resistance and Gate Control in Large-Scale Spin-Coated MoS2 MOSFETs

Year: 2018

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2018.2854789

Authors: Kuanchen Xiong, Lei Li, Roderick J. Marstell, Asher Madjar, Nicholas C. Strandwitz, James C. M. Hwang, Zhaoyang Lin, Yu Huang, Xiangfeng Duan, Alexander Goritz, Matthias Wietstruck, Mehmet Kaynak

Institutions: Lehigh University, University of California, Los Angeles, Leibniz Institute for High Performance Microelectronics

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Office of Naval Research, Air Force Office of Scientific Research

Awards: G1828423741, EFRI 2-DARE: Phosphorene, an Unexplored 2D High-mobility Semiconductor, G3428505739, EFRI 2-DARE: Scalable Synthesis of 2D Layered Materials for Large Area Flexible Thin Film Electronics, NNCI: Cornell Nanoscale Science and Technology Facility (CNF)

OpenAlex ID: W2828474677

FWCI: 0.467

Cites: 16

Cited by: 8

Related to: 10