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Quaternary Chalcogenide Semiconductors with 2D Structures: Rb2ZnBi2Se5 and Cs6Cd2Bi8Te17

Year: 2018
Type: article
Abstract: Two new layered compounds Rb 2 ZnBi 2 Se 5 and Cs 6 Cd 2 Bi 8 Te 17 are described. Rb 2 ZnBi 2 Se 5 crystallizes in the orthorhombic space group Pnma, with lattice parameters of a = 15.6509(17) Å, b = 4.218(8) Å, and c = 18.653(3) Å. Cs 6 Cd 2 Bi 8 Te 17 crystallizes in the monoclinic C 2/ m space group, with a = 28.646(6) Å, b = 4.4634(9) Å, c = 21.164(4) Å, and β = 107.65(3)°. The two structures are different and composed of anionic layers which are formed by inter connecting of BiQ 6 octahedra (Q = Se or Te) and MQ 4 (M = Zn or Cd) tetrahedra. The space between the layers hosts alkali metal as counter cations. The rubidium atoms of Rb 2 ZnBi 2 Se 5 structure can be exchanged with other cations (Cd 2+, Pb 2+ and Zn 2+ ) in aqueous solutions forming new phases. Rb 2 ZnBi 2 Se 5 is an n -type semiconductor and exhibits an indirect band gap energy of 1.0 eV. Rb 2 ZnBi 2 Se 5 is a congruently melting compound (mp ∼644 °C). The thermal conductivity of this semiconductor is very low with 0.38 W·m –1 ·K –1 at 873 K. Density functional theory (DFT) calculations suggest that the low lattice thermal conductivity of Rb 2 ZnBi 2 Se 5 is attributed to heavy Bi atom induced slow phonon velocities and large Gruneisen parameters especially in the a and c directions. The thermoelectric properties of Rb 2 ZnBi 2 Se 5 were characterized with the highest ZT value of ∼0.25 at 839 K.
Language: English
Open Access status: green
OpenAlex ID: W2883466287
FWCI: 0.54
Cites: 56
Cited by: 12
Related to: 10