Year: 2018
Type: article
Abstract: We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in β-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed, Czochralski, molecular beam epitaxy, and low pressure chemical vapor deposition. Through simultaneous, self-consistent fitting of the temperature dependent carrier density and mobility, we are able to accurately estimate the donor energy of Si and Ge to be 30 meV in β-Ga2O3. Additionally, we show that our measured Hall effect data are consistent with Si and Ge acting as typical shallow donors, rather than shallow DX centers. The high temperature Hall effect measurement of Fe doped β-Ga2O3 indicates that the material remains weakly n-type even with the Fe doping, with an acceptor energy of 860 meV relative to the conduction band for the Fe deep acceptor. Van der Pauw measurements of Mg doped Ga2O3 indicate an activation energy of 1.1 eV, as determined from the temperature dependent conductivity.
Source: Applied Physics Letters
DOI: 10.1063/1.5034474
Authors: Adam T. Neal, Shin Mou, Subrina Rafique, Hongping Zhao, Elaheh Ahmadi, James S. Speck, Kevin T. Stevens, John D. Blevins, Darren B. Thomson, Neil Moser, Kelson D. Chabak, Gregg H. Jessen
Institutions: United States Air Force Research Laboratory, Wright-Patterson Air Force Base, U.S. Air Force Research Laboratory Materials and Manufacturing Directorate, Case Western Reserve University, The Ohio State University, University of Michigan, University of California, Santa Barbara, Northrop Grumman (United States), U.S. Air Force Research Laboratory Sensors Directorate
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: G4396695178, G6381710726
OpenAlex ID: W2885577376