Work

Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Year: 2018

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.8b07030

Authors: Janghyuk Kim, Michael A. Mastro, Marko J. Tadjer, Jihyun Kim

Institutions: Korea University, United States Naval Research Laboratory

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Research Foundation of Korea, Korea Institute of Energy Technology Evaluation and Planning, Office of Naval Research

Awards: G4369048575, G4902162394

OpenAlex ID: W2886988695

FWCI: 4.249

Cites: 39

Cited by: 115

Related to: 10