A Review of Metalorganic Chemical Vapor Deposition of High-Temperature Superconducting Thin Films
Year: 1990
Type: conference-paper
Abstract: A status report is given on the metalorganic chemical vapor deposition (MOCVD) of high-temperature superconducting thin films. The advantages of MOCVD processing manifest themselves in the quality of the films produced, and in the economy of the process. Metalorganic precursor requirements, deposition parameters and film properties are discussed. Also difficulties have been identified in making MOCVD a manufacturing technology. To solve these problems, future research directions are proposed.
DOI: 10.1117/12.965153
Authors: A. Erbil, K. Zhang, B. S. Kwak, E. P. Boyd
Institution: Georgia Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: U.S. Department of Energy
OpenAlex ID: W2017762799
