Work

Thermoelectric Properties of Nanostructured Material Based on Si and GaSb

Year: 2018

Type: article

Abstract: Successively forming GaSb islands by solid-phase epitaxy and covering them with a silicon layer, a nanostructured material containing 4 layers of GaSb nanocrystals (NCs) was grown on Si (111) surface. Due to a small size of the NCs (average height ~ 1.7 nm, average lateral size ~ 14 nm) and, as a consequence, to a significant quantum-size effect, a high electrical conductivity (~ 100 Ω-1·cm-1at 600 K) together with a low thermal conductivity (~ 1 – 1.5 W·m-1·K-1at 600 K) was obtained in the nanostructured material Si/NC_GaSb/Si. As a result, the thermoelectric figure of merit of the material has reached 0.82 at 600 K.

Source: Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum

DOI: 10.4028/www.scientific.net/ddf.386.102

Authors: Dmitrii L'vovich Goroshko, Evgeniy Y. Subbotin, Evgeniy Anatolievich Chusovitin, Semeyon A. Balagan, Konstantin N. Galkin, Sergey Dotsenko, Anton Gutakovskii, Vladimir V. Khovaylo, Andrey A. Usenko, Vladimir U. Nazarov, Nikolay G. Galkin

Institutions: Far Eastern Branch of the Russian Academy of Sciences, Russian Academy of Sciences, Institute of Automation and Control Processes, Institute of Semiconductor Physics, National University of Science and Technology, Academia Sinica

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2890385915

FWCI: 0.087

Cites: 24

Cited by: 1

Related to: 10