Year: 2018
Type: article
Abstract: For solid-state spin qubits, single-gate rf readout can minimize the number of gates required for scale-up since the readout sensor can integrate into the existing gates used to manipulate the qubits.However, stateof-the-art topological error correction codes benefit from the ability to resolve the qubit state within a single shot, that is, without repeated measurements.Here, we demonstrate single-gate, single-shot readout of a singlet-triplet spin state in silicon, with an average readout fidelity of 82.9% at 3.3 kHz measurement bandwidth.We use this technique to measure a triplet T -to singlet S 0 relaxation time of 0.62 ms in precision donor quantum dots in silicon.We also show that the use of rf readout does not impact the spin lifetimes (S 0 to T -decay remained approximately 2 ms at zero detuning).This establishes single-gate sensing as a viable readout method for spin qubits.
Source: Physical Review X
Authors: P. Pakkiam, A. V. Timofeev, M. G. House, M. R. Hogg, T. Kobayashi, M. Koch, S. Rogge, M. Y. Simmons
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $4,200
OpenAlex ID: W2890936036