Work

Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1−xSnx

Year: 2018

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2018.2867622

Authors: Jun Zheng, Yongwang Zhang, Zhi Liu, Yuhua Zuo, Chuanbo Li, Chunlai Xue, Buwen Cheng, Qiming Wang

Institutions: Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Minzu University of China

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Natural Science Foundation of Beijing Municipality, National Key Research and Development Program of China

Awards: G2220559999, G645486780, G6635312235, G8857682084

OpenAlex ID: W2891916623

FWCI: 0.809

Cites: 19

Cited by: 16

Related to: 10