Year: 2018
Type: article
Abstract: Precise lattice constant measurements based on the Bond method for various types of diamond were performed with a recently reported compensation technique. For the measurements, a calibrated Si single crystal was used as a reference; it was placed in a chamber whose temperature was carefully controlled below the standard deviation σ of ±0.1 °C, including thermo-couple fluctuation of ±0.06 °C for ±σ, X-ray wavelength calibration was performed using the monochromator temperature. A calibration was also carried out for the instrumental value depending on the Bragg angle and it was applied to the 004 diffraction peak of diamond. The lattice constant of high quality insulating undoped IIa type diamond was 3.567095 ± 0.000017 Å (±2σ), which was larger than the previous data derived without above mentioned calibrations. The measurements were carried out for various types of diamond including high pressure high temperature (HPHT) grown crystals as well as crystals grown by the chemical vapor deposition (CVD) method.
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Awards: G159522045, Research for quantum media conversion in diamond nano quantum system, Physical properties of isotope diamond looking for further light element materials, Study on impurity control in an extremely-low concentration range for obtaining highly-functional diamond crystals, G3462753497, Electron Spin Control of Diamond by Surface Carrier and its Application to Nuclear Spin Detection of Bio-Molecules, G5186906226, ダイヤモンド量子セキュリティ, G6150807914, G6590850188, G6701139992, Ion Conductivity in All-Solid-State Thin-Film Lithium Batteries
OpenAlex ID: W2895354269