Work

Characteristics of hetero‐structured thermoelectric devices with a ‐ Si / Mg 2 Si‐stacked thin film layers

Year: 2018

Type: article

Abstract: New high‐quality thermoelectric devices with amorphous silicon/magnesium silicide (a‐Si/Mg 2 Si)‐stacked hetero‐structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a‐Si/Mg 2 Si hetero‐structure layers were found to be much superior to those of the a‐Si layer.

Source: Electronics Letters

DOI: 10.1049/el.2018.6352

Authors: J.H. Lee, J. Ha, T. Piyapatarakul, C. Yoon, B. Jeon, G. Yoon

Institution: Korea Advanced Institute of Science and Technology

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

Funder: National Research Foundation of Korea