Work

Electrochemically copper-doped bismuth tellurium selenide thin films

Year: 2018
Type: article
Abstract: We report the first results of a study on electrochemically doped copper bismuth tellurium selenide thin films electrodeposited from aqueous nitric acid electrolytes containing up to 2 mM of Cu(NO3)2. The effect of Cu(NO3)2 concentration on the composition, structure and thermoelectric properties of the bismuth tellurium selenide films is investigated by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Seebeck and Hall effect measurements. A Cu(NO3)2 concentration of 1.5 mM is found to offer a Seebeck coefficient of up to −390 μV K−1 at room temperature, which is the highest reported to date for an electrodeposited bismuth tellurium compound.
Language: English
Open Access status: hybrid
Estimated APC paid: $2,630
OpenAlex ID: W2896347132
FWCI: 0.35
Cites: 18
Cited by: 9
Related to: 10