Work

Single layer MoS2 nanoribbon field effect transistor

Year: 2019

Type: article

Abstract: We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50 nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over the etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5 V/dec using a global backgate. Moreover, we measure a high current density of 38 μA/μm, resulting in a high on/off ratio of the order of 105. We observe mobility reaching as high as 50 cm2/V s with increasing source-drain bias.

Source: Applied Physics Letters

DOI: 10.1063/1.5079860

Authors: D. Kotekar-Patil, J. Deng, S. L. Wong, Chit Siong Lau, Kuan Eng Johnson Goh

Institutions: Agency for Science, Technology and Research, Institute of Materials Research and Engineering, National University of Singapore

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Agency for Science, Technology and Research

Award: G5866636980