Work

On the electrical variability of resistive-switching memory devices based on NiO oxide

Year: 2011

Type: conference-paper

Abstract: Resistive-switching memories (so-called RRAM) are increasingly investigated since they gather low cost, high integration capabilities together with good performances [1]. RRAM memories based on transition metal oxide are promising candidate because of a simple metal/oxide/metal stack allowing the integration of memory elements into the back end of line [2]. Before substituting conventional Flash memories, RRAM devices must fulfill reliability requirements and the variability of their electrical characteristics has to be properly apprehended. In this paper the variability on forming and reset characteristics are reproduced by 1D modeling. By using this approach, this paper aims at identifying the key physical parameters that may explain the intrinsic spread of electrical characteristics.

Source: HAL

Authors: Tirano, S, Bocquet, Marc, Muller, Christophe, Deleruyelle, D., Perniola, L., Jousseaume, V., de Salvo, B., Reimbold, G.

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2899237444

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