Work

Crystallographic plane and topography-dependent growth of semipolar InGaN nanorods on patterned sapphire substrates by molecular beam epitaxy

Year: 2018

Type: article

Source: Nanoscale

DOI: 10.1039/c8nr07307d

Authors: Jian Shen, Yulin Zheng, Zhenzhu Xu, Yuefeng Yu, Fangliang Gao, Shuguang Zhang, Yang Gan, Guoqiang Li

Institutions: Harbin Institute of Technology, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation

Awards: G1998497975, 在非常规衬底上制备III族氮化物单晶薄膜的方法和相关机理研究, Si衬底上GaN纳米柱基外延材料的制备及相关机理研究, 新型衬底上的III族氮化物外延薄膜的掺杂机理与器件应用基础研究, 高能激光系统超洁净制造的关键基础科学问题研究

OpenAlex ID: W2899458978

FWCI: 0.528

Cites: 49

Cited by: 6

Related to: 10