Work

Solution-processed amorphous ZrO 2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

Year: 2018

Type: article

Abstract: Solution-processed amorphous zirconium oxide (ZrO 2 ) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO 2 films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.

Source: RSC Advances

DOI: 10.1039/c8ra06911e

Authors: Jong-Baek Seon, Nam-Kwang Cho, Gayeong Yoo, Youn Sang Kim, Kookheon Char

Institutions: Seoul National University, Advanced Institute of Convergence Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,042

Funders: Samsung Advanced Institute of Technology, Samsung