Work

Localization and transient emission properties in InGaN/GaN quantum wells of different polarities within core–shell nanorods

Year: 2018

Type: article

Source: Nanoscale

DOI: 10.1039/c8nr05863f

Authors: Y. Robin, E. A. Evropeitsev, T. V. Shubina, D. A. Kirilenko, V. Yu. Davydov, A. N. Smirnov, A. A. Toropov, I. A. Eliseyev, S. Y. Bae, M. Kushimoto, S. Nitta, S. V. Ivanov, H. Amano

Institutions: Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya University, Ioffe Institute, Korea Institute of Ceramic Engineering and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Russian Foundation for Basic Research, Centre National de la Recherche Scientifique, Russian Science Foundation, Ioffe Institute, Japan Society for the Promotion of Science, Institute of Materials and Systems for Sustainability, Nagoya University

Award: G226229749

OpenAlex ID: W2901196521

FWCI: 0.739

Cites: 35

Cited by: 11

Related to: 10