Work

SiC Device Junction Temperature Online Monitoring

Year: 2018

Type: conference-paper

Source: IEEE Energy Conversion Congress and Exposition (ECCE)

DOI: 10.1109/ecce.2018.8558298

Authors: Ruxi Wang, Juan Sabate, Krishna Mainali, Tomas Sadilek, Peter Losee, Yash Singh

Institutions: General Electric (United States), GE Global Research (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2903783614

FWCI: 4.003

Cites: 7

Cited by: 21

Related to: 10