MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Work
Year: 2018
Type: article
Abstract: In this work, we report record electron mobility values in unintentionally doped β-Ga2O3 films grown by metal-organic chemical vapor deposition. Using degenerately Sn-doped regrown n+ β-Ga2O3 contact ... more
Source: APL Materials
Cites: 52
Cited by: 221
Related to: 10
FWCI: 6.973
Citation percentile (by year/subfield): 78.18
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
APC paid (est): $2,200
Funders Defense Threat Reduction Agency, Office of Naval Research, Air Force Office of Scientific Research, Air Force Office of Scientific Research, Air Force Office of Scientific Research
Grant IDS HDTRA11710034, N00014-16-P-2058, FA9550-18-1-0059, FA9550-17-P-0029, FA9550-18-1-0479