Year: 2019
Type: article
Abstract: 2D materials are promising candidates for next‐generation electronic devices. In this regime, insulating 2D ferromagnets, which remain rare, are of special importance due to their potential for enabling new device architectures. Here the discovery of ferromagnetism is reported in a layered van der Waals semiconductor, VI 3 , which is based on honeycomb vanadium layers separated by an iodine–iodine van der Waals gap. It has a BiI 3 ‐type structure (, No.148) at room temperature, and the experimental evidence suggests that it may undergo a subtle structural phase transition at 78 K. VI 3 becomes ferromagnetic at 49 K, below which magneto‐optical Kerr effect imaging clearly shows ferromagnetic domains, which can be manipulated by the applied external magnetic field. The optical bandgap determined by reflectance measurements is 0.6 eV, and the material is highly resistive.
Source: Advanced Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: Materials Sciences and Engineering Division, National Science Foundation, U.S. Department of Energy, Princeton University, Iowa State University, Office of Science, Division of Materials Research, Basic Energy Sciences, Brookhaven National Laboratory, Division of Materials Sciences and Engineering
Awards: G1126863173, G1286251239, G1418315740, G1519358529, G1572106353, G1734011414, G1866217153, G2138945613, G2316606464, G2327333655, G2441759041, G249831736, G2632705388, G285533474, G3232631243, G338944111, G498139845, G524707868, G549834383, MIP: Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), G5959670421, G969889393
OpenAlex ID: W2904489587