Work

Precursors of Gate-Oxide Degradation in Silicon Carbide MOSFETs

Year: 2018

Type: conference-paper

Source: IEEE Energy Conversion Congress and Exposition (ECCE)

DOI: 10.1109/ecce.2018.8557354

Authors: Ujjwal Karki, Fang Z. Peng

Institution: Michigan State University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2905288154

FWCI: 4.059

Cites: 20

Cited by: 26

Related to: 10