Work

An Impact Ionization MOSFET With Reduced Breakdown Voltage Based on Back-Gate Misalignment

Year: 2018

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2018.2887168

Authors: Gaurav Musalgaonkar, Shubham Sahay, Raghvendra Sahai Saxena, Mamidala Jagadesh Kumar

Institutions: Solid State Physics Laboratory, California NanoSystems Institute, University of California, Santa Barbara, Indian Institute of Technology Delhi

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2906852480

FWCI: 0.658

Cites: 46

Cited by: 21

Related to: 10