Work

Online Junction Temperature Extraction of SiC Power mosfets With Temperature Sensitive Optic Parameter (TSOP) Approach

Year: 2019

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2018.2890303

Authors: Chengmin Li, Haoze Luo, Chushan Li, Wuhua Li, Huan Yang, Xiangning He

Institutions: University of Illinois Urbana-Champaign, Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Key Research and Development Program of China, Natural Science Foundation of Zhejiang Province

Awards: G3811753748, G6003460020

OpenAlex ID: W2909888246

FWCI: 1.637

Cites: 30

Cited by: 59

Related to: 10