Work

Degradation Assessment and Precursor Identification for SiC MOSFETs Under High Temp Cycling

Year: 2019

Type: article

Source: IEEE Transactions on Industry Applications

DOI: 10.1109/tia.2019.2891214

Authors: Enes Ugur, Fei Yang, Shi Pu, Shuai Zhao, Bilal Akin

Institutions: The University of Texas at Dallas, Northwestern Polytechnical University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

Award: CAREER: Real-Time Fault Diagnosis and Failure Prognosis of Next Generation Power Electronics Systems

OpenAlex ID: W2910218467

FWCI: 5.822

Cites: 19

Cited by: 163

Related to: 10