OpenAlex | First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers

First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers

Work

Year: 2018

Type: article

Source: 2021 IEEE International Electron Devices Meeting (IEDM)

Authors A. Vandooren, J. Franco, Z. Wu, B. Parvais, W. Li +28 more

Institutions IMEC, KU Leuven

Cites: 1

Cited by: 28

Related to: 10

FWCI: 5.933

Citation percentile (by year/subfield): 83.3

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Sustainable Development Goal Affordable and clean energy

Open Access status: closed