Work

Ultra-high Q Monocrystalline Silicon Carbidedisk Resonators Anchored Upon a Phononic Crystal

Year: 2018

Type: conference-paper

Abstract: This work introduces a 3D design incorporating a phononic crystal to decouple a centrally-supported silicon carbide bulk acoustic wave disk resonator from its Si handle layer.By overcoming thermoelastic and anchor losses in bulk acoustic wave resonators, this scheme allows for probing the phonon-phonon dissipation limits i.e.Akhiezer loss.Using a custom silicon carbide on insulator platform, SiC disk resonators anchored upon phononic crystal were fabricated and optically measured.SiC disk resonators exhibit Q-factors near 4M with a record f•Q product of 1.85x10 13 Hz for the radial breathing mode operating at 5 MHz, limited by thermoelastic losses.This is the highest f•Q measured in monocrystalline silicon carbide resonators, an important step toward the batch fabrication of inertial-grade SiC BAW gyroscopes.

Source: Solid-State Sensors, Actuators, and Microsystems Workshop (Hilton Head Workshop)

DOI: 10.31438/trf.hh2018.22

Authors: J. Yang, B. Hamelin, S.D. Ko, F. Ayazi

Institution: Georgia Institute of Technology

Language: English

Topic: Acoustic Wave Resonator Technologies

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: Defense Advanced Research Projects Agency, Advanced Research Projects Agency, U.S. Navy

Award: G5245224541