The formation of SiC films by magnetron sputtering
Year: 2018
Type: article
Abstract: This paper is devoted to the synthesis of solid silicon carbide (SiCx) films on the surface of single-crystalsilicon (c-Si) with a thin interlayer of amorphous silicon (a-Si) by magnetron sputtering as well as toestablish new regularities in the influence of heat treatment on composition, crystallization processes andstructure of layers. A principal difference between the method of synthesis and the traditionally usedmagnetron sputtering is the 13.56 MHz high-frequency magnetron sputtering of a silicon target and agraphite target. An amorphous SiC0.97 film with a density of 3.179 g/cm3 and 165 nm thick was obtainedunder the deposition regime: rf = 150 W, 13.56 MHz; Ar – 2.4 l/h, 0.4 Pa; 100°C, 2400 s; containing SiCnanocrystals after annealing (1100°C, 30 min, Ar). Synthesis of an amorphous SiCx film with a density of3.204 g/cm3 at a long sputtering of Si and C targets – 14400 s, containing nanoclusters with apredominance of truncated SiC bonds, was carried out.
Source: Physical Sciences and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2913687405