Year: 2019
Type: article
Abstract: β-Ga 2 O 3 Schottky rectifiers consisting of thick (10 μm) epitaxial drift regions on conducting substrates are shown to have a high tolerance to 60 Co gamma ray irradiation. This is due to the low carrier removal rate of <1 cm −1 for gamma rays, which contrasts to values of 300–500 cm −1 for MeV protons and alpha particles in the same rectifier structures. Changes in diode ideality factor, Schottky barrier height, on-resistance, on-off ratio, and reverse recovery time are all minimal for fluences up to 2 × 10 16 cm −2 (absorbed dose of 100 kGy (Si)). These results are consistent with previous reports on gamma-irradiation of Ga 2 O 3 metal oxide semiconductor field effect transistors (MOSFETs) where changes were ascribed to damage in the gate dielectric and not to the Ga 2 O 3 itself.
DOI: 10.1149/2.0091907jss
Institutions: University of Florida, Korea University, Arizona State University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $1,950
OpenAlex ID: W2914666757