Work

Integrated 9Be+ multi-qubit gate device for the ion-trap quantum computer

Year: 2019

Type: article

Abstract: We demonstrate the experimental realization of a two-qubit Mølmer–Sørensen gate on a magnetic field-insensitive hyperfine transition in 9 Be + ions using microwave near-fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be 98.2 ± 1.2% and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.

Source: npj Quantum Information

DOI: 10.1038/s41534-019-0184-5

Authors: H. Hahn, G. Zarantonello, M. Schulte, A. Bautista-Salvador, K. Hammerer, C. Ospelkaus

Institutions: Leibniz University Hannover, Physikalisch-Technische Bundesanstalt

Language: English

Topic: Quantum Information and Cryptography

Subfield: Artificial Intelligence

Field: Computer Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,490

Funder: Deutsche Forschungsgemeinschaft