Work

Characterization of 3.3 kV and 6.5 kV SiC MOSFETs

Year: 2017

Type: article

Authors: Takui Sakaguchi, Masatoshi Aketa, Takashi Nakamura, Masaharu Nakanishi, Munaf Rahimo

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2916469791

FWCI: 1.339

Cites:

Cited by: 18

Related to: 10