Work

Dependence of buried CoSi sub 2 resistivity on ion implantation and annealing conditions

Year: 1992

Type: conference-paper

Abstract: We have investigated the dependence of electrical and material properties of buried CoSi{sub 2} layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi{sub 2} layers depend strongly on the implantation temperature. CoSi{sub 2} layers with the lowest resistivity and best crystalline quality ({chi}{sub min} as low as 3.6%) were obtained from samples implanted at 300{degrees}C--400{degrees}C. Implantation at higher temperatures (e.g., 580{degrees}C) produced cobalt disilicide layers with significantly higher electrical resistivity and a {chi}{sub min} of about 10.7%.

Source: University of North Texas Digital Library (University of North Texas)

Authors: Namavar, F., Kalkhoran, N. M., Manke, J. M., Luo, L., McGinn, J. T.

Institutions: Spire Corporation (United States), Los Alamos National Laboratory, Princeton University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2916927051

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