Work

Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask

Year: 2019

Type: article

Source: Nanoscale

DOI: 10.1039/c8nr10289a

Authors: Kun Wang, Tongjun Yu, Yang Wei, Mengda Li, Guoyi Zhang, Shoushan Fan

Institutions: Peking University, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Tsinghua University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1958741448, G2217318626, AlGaN基深紫外LED光出射机制及其调控方法研究, G3915773606, 基于有序碳纳米管模板的功能氧化物的制备和器件应用研究

OpenAlex ID: W2917806539

FWCI: 0.675

Cites: 36

Cited by: 8

Related to: 10