Work

Ultrahigh Deep-UV Sensitivity in Graphene-Gated β-Ga 2 O 3 Phototransistors

Year: 2019

Type: article

Source: ACS Photonics

DOI: 10.1021/acsphotonics.9b00032

Authors: Suhyun Kim, Sooyeoun Oh, Jihyun Kim

Institution: Korea University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Korea University, National Research Foundation of Korea, Korea Institute of Energy Technology Evaluation and Planning

Awards: G4369048575, G4902162394

OpenAlex ID: W2918533061

FWCI: 4.885

Cites: 42

Cited by: 132

Related to: 10