Work

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

Year: 2019

Type: article

Source: 中国科学通报：英文版

DOI: 10.1016/j.scib.2019.03.005

Authors: Guofang Yu, Renrong Liang, Xiawa Wang, Jun Xu, Tian-Ling Ren

Institutions: Beijing National Research Center for Information Science and Technology, Tsinghua University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Tsinghua University, Natural Science Foundation of Beijing Municipality, Science, Technology and Innovation Commission of Shenzhen Municipality, Beijing Innovation Center for Future Chip, Special Fund for Agro-scientific Research in the Public Interest, National Key Research and Development Program of China, National Major Science and Technology Projects of China

Awards: G2046660865, G2843566530, G2961021194, G3309994532, G4051779883, G4704657030, G5060981932, G668749187, 面向大气灰霾监测的自供电低功耗纳米谐振器基础研究, G8759934918

OpenAlex ID: W2922284174

FWCI: 0.181

Cites: 63

Cited by: 12

Related to: 10