Work

Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolayer field-effect transistors

Year: 2019

Type: article

Abstract: nanoFETs with a high breakdown voltage of over 300 V could pave a way for downsizing power electronic devices, enabling the economization of power systems.

Source: RSC Advances

DOI: 10.1039/c9ra01163c

Authors: Jinho Bae, Hyoung Woo Kim, In Ho Kang, Jihyun Kim

Institutions: Korea University, Korea Electrotechnology Research Institute

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,042

Funders: National Research Foundation, Korea University, National Research Foundation of Korea, Ministry of Science and ICT, South Korea, Korea Institute of Energy Technology Evaluation and Planning

Awards: G1539787696, G4369048575, G4902162394

OpenAlex ID: W2925062523

FWCI: 1.576

Cites: 38

Cited by: 39

Related to: 10