Thermoelectric Properties of MnSi1.74-1.75:Gem Prepared by Solid-State Reaction and Hot Pressing
Year: 2019
Type: article
Abstract: Higher manganese silicides (HMSs) MnSi 1.74-1.75:Ge m (m = 0.01-0.04)were prepared by solid-state reaction and hot pressing.The major phases of the HMSs were Mn 27 Si 47 or Mn 4 Si 7 , and a small quantity of Si remained, but the intermetallic compound MnSi was not formed.The lattice constant increased with the substitution of Ge at Si sites.As the Ge content increased, the electrical conductivity increased, and the Seebeck coefficient decreased.The power factor was increased by Ge doping; however, the thermal conductivity also increased.Therefore, the dimensionless figure of merit (ZT) could not be increased significantly by Ge doping.For MnSi 1.74 :Ge m , a maximum ZT of 0.36 was obtained at 823 K for MnSi 1.74 :Ge 0.03 ; for MnSi 1.75 :Ge m , a maximum ZT of 0.32 was achieved at 823 K for MnSi 1.75 :Ge 0.01 .
Source: 대한금속재료학회지
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2935403392