Boosting the Electrical Double‐Layer Capacitance of Graphene by Self‐Doped Defects through Ball‐Milling
Year: 2019
Type: article
Source: Advanced Functional Materials
Institution: Xinjiang University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G1104226677, G684632638, G8017199505
OpenAlex ID: W2938609235
