Work

Influence of intrinsic or extrinsic doping on lattice locations of carbon in semi-insulating GaN

Year: 2019

Type: article

Source: Applied Physics Express

DOI: 10.7567/1882-0786/ab1c19

Authors: Yue Xu, Xuelin Yang, Peng Zhang, Xingzhong Cao, Yao Chen, Shiping Guo, Shan Wu, Jie Zhang, Yuxia Feng, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen

Institutions: Peking University, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Chinese Academy of Sciences, Institute of High Energy Physics, Advanced Micro-Fabrication Equipment (China), Collaborative Innovation Center of Quantum Matter

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G3103628721, G5446277961, Si衬底上氮化物半导体异质结构材料和功率电子器件相关物理问题研究, G8269200524, G8282270163

OpenAlex ID: W2940573458

FWCI: 1.017

Cites: 31

Cited by: 14

Related to: 10