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Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack

Year: 2013

Type: article

Source: IEICE Technical Report; IEICE Tech. Rep.

Authors: Yamamoto Keisuke, Takahiro Sada, Dong Wang, Hiroshi Nakashima

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2522186565

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