Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs
Year: 2019
Type: conference-paper
Institution: DEVCOM Army Research Laboratory
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2944968774