Year: 2019
Type: article
Abstract: A novel one-dimensional geometry for metal–insulator–graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al 2 O 3 -encapsulated graphene with TiO 2 which acts as barrier material. The diodes demonstrate ultrahigh current density since the transport in the graphene and through the barrier is in-plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high-frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.
Source: ACS Applied Electronic Materials
Authors: Zhenxing Wang, Burkay Uzlu, Mehrdad Shaygan, Martin Otto, Mário Ribeiro, Enrique González Marín, Giuseppe Iannaccone, Gianluca Fiori, Mohamed Saeed Elsayed, Renato Negra, Daniel Neumaier
Institutions: AMO (Germany), CIC nanoGUNE, University of Pisa, RWTH Aachen University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2947211519