Work

Charge offset stability in Si single electron devices with Al gates

Year: 2014

Type: article

Abstract: We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 e) is intermediate between that of Al/AlO(x)/Al tunnel junctions (greater than 1 e) and Si SEDs defined with Si gates (0.01 e). This range of values suggests that defects in the AlO(x) are the main cause of the charge offset drift instability.

Source: Nanotechnology

DOI: 10.1088/0957-4484/25/40/405201

Authors: Neil M Zimmerman, Chih-Hwan Yang, Nai Shyan Lai, Wee Han Lim, Andrew S Dzurak

Institutions: National Institute of Standards and Technology, UNSW Sydney, Centre for Quantum Computation and Communication Technology, Asia Pacific University of Technology & Innovation

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2949295557

FWCI: 1.325

Cites: 21

Cited by: 26

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