Year: 2018
Type: article
Abstract: Phase engineering of MoS2transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2transistors by simple light exposure. Nevertheless, the fabrication and demonstration of laser-patterned MoS2devices starting from the metallic polymorph have not been demonstrated yet. Here, we study the effects of laser radiation on 1T/1T'-MoS2transistors with the prospect of driving an in situ phase transition to the 2H-polymorph through light exposure. We find that although the Raman peaks of 2H-MoS2become more prominent and the ones from the 1T/1T' phase fade after the laser exposure, the semiconducting properties of the laser-patterned devices are not fully restored, and the laser treatment ultimately leads to the degradation of the transport channel.
Authors: Nikos Papadopoulos, Joshua O. Island, Herre S. J. van der Zant, Gary A. Steele
Institution: Delft University of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2949987903