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ChemInform Abstract: DIFFUSION OF ION‐IMPLANTED ARSENIC IN SILICON

Year: 1976

Type: article

Source: ChemInform

DOI: 10.1002/chin.197609006

Authors: RICHARD B. FAIR, JOSEPH C. C. TSAI

Language: German

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2951302987

FWCI:

Cites: 1

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Related to: 10