Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics
Year: 2011
Type: article
Abstract: We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55 μm. The substrate fabrication process is compatible with complementary metal-oxide-semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.
Source: Optical Materials Express
DOI: 10.1364/ome.1.001121
Authors: J. Raja Jain, Dany-Sebastien Ly-Gagnon, Krishna C. Balram, Justin S. White, Mark L. Brongersma, David A. B. Miller, Roger T. Howe
Institution: Stanford University
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2067396481