Work

High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

Year: 2019

Type: article

Abstract: , resulting in lower breakdown fields. The degradation stages of proton-irradiated h-BN are similar to those of defective silicon dioxide. The degradation of the h-BN dielectric after proton irradiation is attributed to Frenkel defects created by the high-energy protons, as indicated by the molecular dynamics simulation. Understanding the defect-induced degradation mechanism of h-BN nano-layers can improve their reliability, paving the way to the implementation of 2D h-BN in advanced micro- and nano-electronics.

Source: RSC Advances

DOI: 10.1039/c9ra03121a

Authors: Dongryul Lee, Sanghyuk Yoo, Jinho Bae, Hyunik Park, Keonwook Kang, Jihyun Kim

Institutions: Korea University, Yonsei University

Language: English

Topic: Boron and Carbon Nanomaterials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,042

Funders: National Research Foundation, Ministry of Science, ICT and Future Planning, National Research Foundation of Korea