Year: 2019
Type: article
Abstract: The transport and device physics of the LaAlO${}_{3}$/SrTiO${}_{3}$ interface have mainly been investigated in terms of the system's exotic two-dimensional electron gas. Here researchers observe something rather different: current flow, with strongly nonlinear $I\ensuremath{-}V$ characteristics, through narrow regions of nominally $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}s\phantom{\rule{0}{0ex}}u\phantom{\rule{0}{0ex}}l\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}g$ SrTiO${}_{3}$. Using a side gate, one can even create a transistor with surprisingly high subthreshold slope at low temperatures. While on one hand these results indicate limitations for standard microelectronic integration in LaAlO${}_{3}$/SrTiO${}_{3}$, on the other hand they may present a path toward another class of all-oxide nanoelectronics.
Source: Physical Review Applied
Authors: A. Müller, C. Şahin, M.Z. Minhas, B. Fuhrmann, M.E. Flatté, G. Schmidt
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2952212778