Work

Calculating the band structure of 3C-SiC using sp3d5s* + ∆ model

Year: 2019

Type: article

Abstract: We report on a semiempirical tight-binding model for 3C-SiC including the effect of sp3d5s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses.

Source: Journal of theoretical and applied physics

DOI: 10.1007/s40094-019-0324-5

Authors: Murat Onen, Marco Turchetti

Institution: Massachusetts Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid:

Funder: Massachusetts Institute of Technology